Epic Communications Inc. (Epicom) Announces Next Generation WCDMA/HSPA Power Amplifiers for Greater China’s 3G Markets
January 21, 2011
Hsinchu, Taiwan, January 21, 2011, Epic Communications, Inc. (aka Epicom) today announced a series of its latest next generation WCDMA/HSPA Power Amplifiers (PA). These PA products are specifically designed for 3G portable devices and mobile phones, and are compatible with industry leading 3G chipset solutions. Epicom plans to offer more advanced PA products for other 3G standards such as TD-SCDMA, CDMA2000/EV-DO, and 4G standards of LTE and TD-LTE.
Epicom’s latest series of WCDMA/HSPA Power Amplifiers are designed specifically for the most popular UMTS/WCDMA frequency bands (Bands I, II, V and VIII). These 3G PA products feature high linearity, high power added efficiency, ultra-low quiescent current, excellent temperature stability, and very attractive performance/cost ratio. Epicom’s PAs are provided in 3mm x 3mm packages with the same dimensions, pin-out assignments, and features as other major suppliers, and are compatible with the next generation 3G PA standards.
Based on the most advanced BiFET wafer process which combines InGaP bipolar HBT and GaAs pHEMT processes into one wafer, all key features and functional blocks of Epicom’s 3G PA are integrated into a single cost-effective chip while still delivering superior performance. In comparison to 2G or 2.5G (GSM/GPRS/EDGE) PAs, 3G PAs require much higher linearity to support high data rate transmission and better power added efficiency (PAE) for longer battery life. Epicom’s 3G PAs feature digitally controlled tri-power mode (high, medium, low) operation, and ultra-low quiescent current. The compact 3mm x 3mm x 1mm package form factor includes both the required directional coupler and all matching circuits, and it is fully compliant with next generation 3G/4G PA footprint, feature, and performance requirements.
EPA8100A, EPA8200A, EPA8500A and EPA8800A are Epicom’s latest WCDMA/HSPA PA products to support the most popular 3G bands: EPA8100A for Band 1 (1,920~1,980MHz), EPA8200A for Band 2 (1,850~1,910MHz), EPA8500A for Band 5 (824~849 MHz) and EPA8800A for Band 8 (880~915MHz), respectively. These PAs are designed to operate from a single DC supply voltage ranging from 3.2 to 4.2V. At Vcc=+3.4V, they achieve 35%~40% power added efficiency at 28dBm when operating in high-power mode, 30% in medium-power mode at 18dBm (which is the highest power added efficiency known to the industry), and greater than 10% power added efficiency in low-power modes at 8-10dBm. No external DC-DC converter is required since the built-in voltage regulators eliminate the need for any external reference voltage. The quiescent current is merely 10mA when operating at low-power mode. The PAs also utilize Epicom’s patent pending temperature compensation design which provides unprecedented temperature stability from -40°C to +85°C, allowing smart phones, wireless data cards, and other 3G-equipped MIDs such as tablet PC and e-books to operate in extreme environmental conditions. In addition to 3mm x 3 mm packaged PAs, Epicom also provides these PAs as bare dies to volume SiP module makers for custom module design requirements.
These 3G PAs are fully RoHS compliant and provide superior reliability, temperature stability and durability. Epicom’s latest 3G PA engineering samples and EVBs are immediately available per customers’ request. Epicom will be showcasing its PA and FEM products and their enabled mobile devices at IIC-China Show in Shenzhen and Shanghai in late February and early March of 2011, respectively.
About Epic Communications, Inc. (Epicom):
Epicom is a fabless RF analog Front-End IC (FEIC) and module solution company with its award-winning design teams located in both Hsinchu’s Science Industrial Park, Taiwan and Sunnyvale, California, USA. Additional information regarding Epicom’s company and product specifications can be found on its official website at http://www.epic.com.tw. For sample and pricing inquiries please contact Epicom sales at .